CY62147DV18
MoBL2™
4-Mb (256K x 16) Static RAM
mode reducing power consumption by more than 99% when
deselected (CE HIGH or both BLE and BHE are HIGH). The
Features
• Very high speed: 55 ns and 70 ns
• Wide voltage range: 1.65V – 2.25V
• Pin-compatible with CY62147CV18
• Ultra-low active power
input/output pins (I/O through I/O ) are placed in a high-im-
0
15
pedance state when: deselected (CE HIGH), outputs are dis-
abled (OE HIGH), both Byte High Enable and Byte Low Enable
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW and WE LOW).
— Typical active current: 1 mA @ f = 1 MHz
Writing to the device is accomplished by asserting Chip En-
able (CE) and Write Enable (WE) inputs LOW. If Byte Low
— Typical active current: 6 mA @ f = f
max
Enable (BLE) is LOW, then data from I/O pins (I/O through
• Ultra low standby power
0
I/O ), is written into the location specified on the address pins
7
• Easy memory expansion with CE, and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Packages offered 48-ball BGA
(A through A ). If Byte High Enable (BHE) is LOW, then data
0
17
from I/O pins (I/O through I/O ) is written into the location
8
15
specified on the address pins (A through A ).
0
17
Reading from the device is accomplished by asserting Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
The CY62147DV18 is a high-performance CMOS static RAM
organized as 256K words by 16 bits. This device features ad-
vanced circuit design to provide ultra-low active current. This
is ideal for providing More Battery Life™ (MoBL™) in portable
applications such as cellular telephones. The device also has
an automatic power-down feature that significantly reduces
power consumption. The device can also be put into standby
pins will appear on I/O to I/O . If Byte High Enable (BHE) is
0
7
LOW, then data from memory will appear on I/O to I/O . See
8
15
the truth table for a complete description of read and write
modes.
The CY62147DV18 is available in a 48-ball FBGA package.
Logic Block Diagram
DATA IN DRIVERS
A
10
9
A
A
8
7
6
A
A
A
A
256K x 16
RAM Array
5
4
3
2
I/O – I/O
0
7
A
I/O – I/O
8
A
A
A
15
1
0
COLUMN DECODER
BHE
WE
CE
OE
BLE
Power
Circuit
-Down
Note:
Cypress Semiconductor Corporation
Document #: 38-05343 Rev. *B
•
3901 North First Street
•
San Jose, CA 95134
•
408-943-2600
Revised February 26, 2004
CY62147DV18
MoBL2™
Output Current into Outputs (LOW)............................. 20 mA
Maximum Ratings
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Latch-up Current.....................................................> 200 mA
Storage Temperature ................................–65°C to + 150°C
Operating Range
Ambient Temperature with
Power Applied............................................–55°C to + 125°C
Ambient
Supply Voltage to Ground
Potential......................................–0.2V to + V
Temperature
Device
Range
(T )
V
CC
+ 0.2V
A
CC(MAX)
CY62147DV18L Industrial –40°Cto+85°C 1.65V to 2.25V
CY62147DV18LL
in High Z State
..........................–0.2V to V
+ 0.2V
+ 0.2V
CC(MAX)
.....................–0.2V to V
CC (MAX)
DC Input Voltage
Product Portfolio
Power Dissipation
Operating I (mA)
CC
V
Range (V)
f = 1MHz
f = f
Standby I
(µA)
CC
max
SB2
Speed
(ns)
Product
Min.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
CY62147DV18L
CY62147DV18LL
CY62147DV18L
CY62147DV18LL
1.65
1.8
1.8
2.25
55
1.0
1.0
2.0
6
15
10
15
10
0.5
0.5
18
12
18
12
1.65
2.25
70
2.0
6
Electrical Characteristics Over the Operating Range
CY62147DV18-55
CY62147DV18-70
Parameter Description
Test Conditions
Min. Typ.
Max.
Min. Typ.
Max.
Unit
V
V
V
V
I
Output HIGH
Voltage
I
I
= –0.1 mA
V
= 1.65V
1.4
1.4
V
OH
OL
IH
OH
OL
CC
Output LOW
Voltage
= 0.1 mA
V
= 1.65V
0.2
0.2
V
CC
Input HIGH
Voltage
V
V
=1.65V to 2.25V
=1.65V to 2.25V
1.4
–0.2
–1
V
+ 0.2V 1.4
V + 0.2V
CC
V
CC
CC
Input LOW
Voltage
0.4
+1
+1
–0.2
–1
–1
6
0.4
+1
+1
V
IL
CC
Input Leakage GND < V < V
Current
µA
µA
mA
IX
I
CC
I
I
OutputLeakage GND < V < V , Output Disabled
Current
–1
OZ
O
CC
V
Operating f = f
= 1/t
V = 1.95V L
CC(max)
6
12
8
12
8
CC
CC
MAX
RC
Supply Current
I
= 0 mA
OUT
LL
CMOS levels
V
= 2.25V L
6
15
10
6
15
10
mA
CC(max)
I
= 0 mA
OUT
CMOS levels
LL
f = 1 MHz
V
= 1.95V L
1
1
1.5
2
1
1
1.5
2
mA
mA
CC(max)
CC(max)
LL
= 2.25V L
LL
V
Notes:
5.
6.
V
V
= –2.0V for pulse durations less than 20 ns.
IL(min.)
IH(max)
=V +0.75V for pulse durations less than 20ns.
CC
7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V = V
, T = 25°C.
CC
CC(typ.)
A
Document #: 38-05343 Rev. *B
Page 3 of 11
CY62147DV18
MoBL2™
Electrical Characteristics Over the Operating Range (continued)
CY62147DV18-55
CY62147DV18-70
[7]
[7]
Parameter Description
Test Conditions
Min. Typ.
Max.
12
8
Min. Typ.
Max.
12
8
Unit
I
Automatic CE CE > V −0.2V,
Power-Down
Current —
V
=1.95V
L
0.5
0.5
0.5
µA
SB1
CC
CC(max)
V >V –0.2V,
IN CC
LL
L
V <0.2V); f = f
(Address and Data
IN
MAX
V
=2.25V
18
12
0.5
18
12
CMOS Inputs
CC(max)
Only), f = 0 (OE,
WE, BHE and BLE)
LL
I
Automatic CE CE > V – 0.2V,
V
V
=1.95V
=2.25V
L
0.5
0.5
12
8
0.5
0.5
12
8
µA
SB2
CC
CC(max)
Power-down
Current —
V
V
>V –0.2Vor
< 0.2V, f = 0
IN
IN
CC
LL
L
18
12
18
12
CMOS Inputs
CC(max)
LL
Capacitance for all Packages
Parameter
Description
Test Conditions
T = 25°C, f = 1 MHz,
Max.
10
Unit
C
C
Input Capacitance
Output Capacitance
pF
pF
IN
A
V
= V
CC
CC(typ)
10
OUT
Thermal Resistance
Parameter
Description
Test Conditions
BGA
Unit
Θ
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 3 × 4.5 inch, four-layer printed circuit
board
75
°C/W
JA
Θ
Thermal Resistance
(Junction to Case)
10
°C/W
JC
AC Test Loads and Waveforms
R1
ALL INPUT PULSES
V
V
CC
CC
90%
10%
90%
OUTPUT
10%
GND
Rise Time = 1 V/ns
Fall Time = 1 V/ns
THÉVENIN EQUIVALENT
R2
30 pF
INCLUDING
JIG AND
SCOPE
Equivalent to:
R
TH
OUTPUT
V
Parameters
1.80V
13500
10800
6000
Unit
Ω
R1
R2
Ω
R
Ω
TH
V
0.80
V
TH
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
for Data Retention
CC
Conditions
Min.
Typ.
Max. Unit
V
V
1.0
V
DR
I
Data Retention Current
V
V
= 1.0V CE > V – 0.2V,
L
6
4
µA
CCDR
CC
CC
> V – 0.2V or V < 0.2V
IN
CC
IN
LL
t
t
Chip Deselect to Data Retention Time
Operation Recovery Time
0
ns
ns
CDR
t
R
RC
Notes:
8. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05343 Rev. *B
Page 4 of 11
CY62147DV18
MoBL2™
wqewqewq
DATA RETENTION MODE
> 1.0 V
V
V
CC(min)
CC(min)
V
V
CC
DR
t
t
R
CDR
CE or
BHE.BLE
55 ns
70 ns
Parameter
Read Cycle
Description
Read Cycle Time
Min.
55
Max.
Min.
70
Max.
Unit
t
t
t
t
t
t
t
t
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
RC
Address to Data Valid
55
70
AA
Data Hold from Address Change
CE LOW to Data Valid
10
10
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
55
25
70
35
OE LOW to Data Valid
OE LOW to LOW Z
5
10
0
5
10
0
OE HIGH to High Z
16
20
16
25
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
55
55
70
70
PD
BLE / BHE LOW to Data Valid
DBE
LZBE
HZBE
BLE / BHE LOW to Low Z
10
10
BLE / BHE HIGH to HIGH Z
20
25
Write Cycle
t
t
t
t
t
t
t
t
t
t
t
Write Cycle Time
55
40
40
0
70
50
50
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
WC
CE LOW to Write End
SCE
AW
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
WE Pulse Width
HA
0
0
SA
40
40
25
0
45
50
30
0
PWE
BW
BLE / BHE LOW to Write End
Data Set-Up to Write End
Data Hold from Write End
SD
HD
WE LOW to High-Z
20
25
HZWE
WE HIGH to Low-Z
10
10
LZWE
Notes:
9. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signal or by disabling both BHE and BLE.
10. Test conditions for all parameters other than three-state parameters assume signal transition time of 1V/ns or less, timing reference levels of V
/2, input
CC(typ)
pulse levels of 0 to V
, and output loading of the specified I /I as shown in the “AC Test Loads and Waveforms” section.
CC(typ.)
OL OH
LZCE HZBE
11. At any given temperature and voltage condition, t
given device.
is less than t
, t
is less than t
, t
is less than t
, and t
is less than t
for any
HZCE
LZBE HZOE
LZOE
HZWE
LZWE
12.
t
, t
, t
, and t
transitions are measured when the outputs enter a high impedence state.
HZOE HZCE HZBE
HZWE
13. The internal Write time of the memory is defined by the overlap of WE, CE = V , BHE and/or BLE = V . All signals must be ACTIVE to initiate a write and any
IL
IL
of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates
the write.
Document #: 38-05343 Rev. *B
Page 5 of 11
CY62147DV18
MoBL2™
Switching Waveforms
Read Cycle 1 (Address Transition Controlled)
t
RC
ADDRESS
t
AA
t
OHA
DATA OUT
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (OE Controlled)
ADDRESS
CE
t
RC
t
PD
HZCE
t
t
ACE
OE
t
HZOE
t
DOE
BHE/BLE
t
LZOE
t
HZBE
t
DBE
t
LZBE
HIGH
IMPEDANCE
HIGH IMPEDANCE
DATA OUT
DATA VALID
t
LZCE
t
PU
V
I
CC
CC
SUPPLY
CURRENT
50%
50%
I
SB
Notes:
14. The device is continuously selected. OE, CE = V , BHE and/or BLE = V .
IL
IL
15. WE is HIGH for read cycle.
16. Address valid prior to or coincident with CE and BHE, BLE transition LOW.
Document #: 38-05343 Rev. *B
Page 6 of 11
CY62147DV18
MoBL2™
Switching Waveforms (continued)
Write Cycle No. 1 (WE Controlled)
t
WC
ADDRESS
CE
tSCE
t
t
HA
AW
t
SA
t
PWE
WE
t
BW
BHE/BLE
OE
t
SD
t
HD
DATAIN
DATA I/O
NOTE
t
HZOE
Write Cycle No. 2 (CE Controlled)
t
WC
ADDRESS
CE
t
SCE
t
SA
t
t
HA
AW
tPWE
WE
t
BW
BHE/BLE
OE
t
t
SD
HD
DATAIN
DATA I/O
NOTE
t
HZOE
Notes:
17. Data I/O is high impedance if OE = V
.
IH
18. If CE goes HIGH simultaneously with WE = V , the output remains in a high-impedance state.
IH
19. During this period, the I/Os are in output state and input signals should not be applied.
Document #: 38-05343 Rev. *B
Page 7 of 11
CY62147DV18
MoBL2™
Switching Waveforms (continued)
Write Cycle No. 3 (WE Controlled, OE LOW)
t
WC
ADDRESS
CE
t
SCE
t
BW
BHE/BLE
t
t
HA
AW
t
SA
t
PWE
WE
t
t
HD
SD
DATAI/O
DATAIN
t
LZWE
t
HZWE
Write Cycle No. 4 (BHE/BLE Controlled, OE LOW)
t
WC
ADDRESS
CE
t
SCE
t
t
HA
AW
tBW
BHE/BLE
WE
t
SA
tPWE
tHZWE
t
HD
t
SD
DATA I/O
DATAIN
NOTE 19
tLZWE
Document #: 38-05343 Rev. *B
Page 8 of 11
CY62147DV18
MoBL2™
Truth Table
CE
H
X
WE
X
OE
X
BHE
X
BLE
X
Inputs/Outputs
High Z
High Z
Data Out (I/O –I/O
Mode
Deselect/Power-Down
Deselect/Power-Down
Read
Power
Standby (I
Standby (I
)
SB
X
X
H
H
)
SB
L
H
L
L
L
)
Active (I )
CC
O
15
L
H
L
H
L
Data Out (I/O –I/O );
Read (Lower byte only)
Active (I )
CC
O
7
I/O –I/O in High Z
8
15
L
H
L
L
H
Data Out (I/O –I/O );
Read (Higher byte only)
Active (I
)
8
15
CC
I/O –I/O in High Z
0
7
L
L
L
L
L
H
H
H
L
H
H
H
X
X
L
H
L
L
L
H
L
L
High Z
Output Disabled
Output Disabled
Output Disabled
Write
Active (I
Active (I
Active (I
Active (I
Active (I
)
CC
High Z
High Z
)
CC
)
CC
L
Data In (I/O –I/O
)
)
CC
O
15
L
H
Data In (I/O –I/O );
Write (Lower byte only)
)
CC
O
7
I/O –I/O in High Z
8
15
L
L
X
L
H
Data In (I/O –I/O );
Write (Higher byte only)
Active (I
)
8
15
CC
I/O –I/O in High Z
0
7
Ordering Information
Speed
(ns)
Package
Name
Operating
Range
Ordering Code
Package Type
55
CY62147DV18L-55BVI
CY62147DV18LL-55BVI
CY62147DV18L-70BVI
CY62147DV18LL-70BVI
CY62147DV18L-55BVXI
CY62147DV18LL-55BVXI
CY62147DV18L-70BVXI
CY62147DV18LL-70BVXI
BV48A
BV48A
BV48A
BV48A
48-ball Fine Pitch BGA (6 mm × 8mm × 1 mm)
Industrial
Industrial
Industrial
Industrial
70
55
70
48-ball Fine Pitch BGA (6 mm × 8mm × 1 mm)
48-ball Fine Pitch BGA (6 mm × 8mm × 1 mm) Pb-free
48-ball Fine Pitch BGA (6 mm × 8mm × 1 mm) Pb-free
Document #: 38-05343 Rev. *B
Page 9 of 11
CY62147DV18
MoBL2™
Package Diagram
48-Lead VFBGA (6 x 8 x 1 mm) BV48A
51-85150-*B
MoBL is a registered trademark, and MoBL2 and More Battery Life are trademarks, of Cypress Semiconductor. All product and
company names mentioned in this document may be the trademarks of their respective holders.
Document #: 38-05343 Rev. *B
Page 10 of 11
© Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
CY62147DV18
MoBL2™
Document History Page
Document Title:CY62147DV18 MoBL2™ 4-Mb (256K x 16) Static RAM
Document Number: 38-05343
Issue
Date
Orig. of
Change
REV.
**
ECN NO.
127482
131009
229908
Description of Change
06/17/03
11/26/03
See ECN
HRT
CBD
AJU
New Data Sheet
*A
Changed From Advance to Preliminary
*B
Changed From Preliminary to Final
Added 70 ns speed bin
Changed Vcc MAX spec from 2.20V to 2.25V
Modified V spec on footnote #6 from V
+ 0.5V to V
+ 0.75V
CC (MAX)
IH
CC (MAX)
Changed I TYP values from 8 mA to 6 mA
CC
Changed I MAX values at Vcc (max) = 1.95V from 15 mA to 12 mA (L bin)
CC
and 10 mA to 8mA (LL bin)
Changed I MAX values at Vcc (max) = 2.25V from 18 mA to 15 mA (L bin)
CC
and 12mA to 10 mA (LL bin)
With modified V
spec, changed I
and I
MAX values from 15 uA
cc MAX
SB1
SB2
to 18 uA (L bin) and 10 uA to 12 uA (LL bin)
Modified input and output capacitance values
Removed footnote #9 from earlier rev
Removed MAX value for V
DR
Modified t
from 20 ns to 16 ns
HZOE
Added Pb-free ordering information
Document #: 38-05343 Rev. *B
Page 11 of 11
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