TDA8559T
Low-voltage stereo headphone amplifier
Rev. 03 — 15 May 2006
Product data sheets
1. General description
The TDA8559T is a stereo amplifier that operates over a wide supply voltage range from
1.9 V to 30 V and consumes a very low quiescent current. This makes it suitable for
battery fed applications (2 × 1.5 V cells). Because of an internal voltage buffer, this device
can be used with or without a capacitor connected in series with the load. It can be
applied as a headphone amplifier, but also as a mono amplifier with a small speaker
(25 Ω), or as a line driver in mains applications.
2. Features
I Operating voltage from 1.9 V to 30 V
I Very low quiescent current
I Low distortion
I Few external components
I Differential inputs
I Usable as a mono amplifier in Bridge-Tied Load (BTL) or stereo Single-Ended (SE)
I Single-ended mode without loudspeaker capacitor
I Mute and Standby mode
I Short-circuit proof to ground, to supply voltage (< 10 V) and across load
I No switch on or switch off clicks
I ESD protected on all pins
3. Applications
I Portable telephones
I MP3 players
I Portable audio
I Mains fed equipment
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
6. Block diagram
V
P2
V
P1
15
16
1
REFERENCE
STANDBY
V
P
2
3
50 kΩ
+
+IN1
−
V/I
14
−
−IN1
OA
OUT1
+
50 kΩ
50 kΩ
7
8
DQC
MUTE
MODE
INPUT
LOGIC
+
−
5
6
11
+
+IN2
OUT2
OA
V/I
−
−IN2
50 kΩ
50
50
kΩ
kΩ
V
P
100 kΩ
12
4
BUFFER
BUFFER
SVRR
100
kΩ
TDA8559T
9,10
13
mgd115
n.c.
GND
Fig 1. Block diagram
TDA8559_3
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheets
Rev. 03 — 15 May 2006
3 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
7. Pinning information
7.1 Pinning
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
STANDBY
+IN1
V
V
P1
P2
−IN1
OUT1
GND
SVRR
+IN2
TDA8559T
BUFFER
OUT2
n.c.
−IN2
MUTE
MODE
n.c.
001aae802
Top view
Fig 2. Pin configuration
7.2 Pin description
Table 3.
Symbol
STANDBY
+IN1
Pin description
Pin
1
Description
standby select
2
non-inverting input 1
inverting input 1
−IN1
3
SVRR
+IN2
4
supply voltage ripple rejection
non-inverting input 2
inverting input 2
mute select
5
−IN2
6
MUTE
MODE
n.c.
7
8
input mode select
not connected
9
n.c.
10
11
12
13
14
15
16
not connected
OUT2
BUFFER
GND
output 2
buffer output (0.5VP)
ground
OUT1
VP2
output 1
high supply voltage
low supply voltage
VP1
TDA8559_3
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheets
Rev. 03 — 15 May 2006
4 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
8. Functional description
The TDA8559T contains two amplifiers with differential inputs, a 0.5VP output buffer and a
high supply voltage stabilizer. Each amplifier consists of a voltage-to-current converter
(V/I), an output amplifier and a common dynamic quiescent current controller. The gain of
each amplifier is internally fixed at 26 dB (= 20 ×). The 0.5VP output can be used as a
replacement for the single-ended capacitors. The two amplifiers can also be used as a
mono amplifier in a BTL configuration thereby resulting in more output power.
With three mode select pins, the device can be switched into the following modes:
1. Standby mode (IP < 10 µA)
2. Mute mode
3. Operation mode, with two input selections (the input source is directly connected or
connected via coupling capacitors at the input).
The ripple rejection in the stereo application with a single-ended capacitor can be
improved by connecting a capacitor between the 0.5VP capacitor pin and ground.
The device is fully protected against short-circuiting of the output pins to ground, to the
low supply voltage pin and across the load.
8.1 V/I converters
The V/I converters have a transconductance of 400 µS. The inputs are completely
symmetrical and the two amplifiers can be used in opposite phase. The Mute mode
causes the V/I converters to block the input signal. The input mode pin selects two
applications in which the V/I converters can be used.
The first application (input mode pin floating) is used with a supply voltage below 6 V. The
input DC level is at ground level (the unused input pin connected to ground) and no input
coupling capacitors are necessary. The maximum converter output current is sufficient to
obtain an output swing of 3 V (peak).
In the second application with a supply voltage greater than 6 V (input mode pin HIGH),
the input mode pin is connected to VP. In this configuration (input DC level is
0.5VP + 0.6 V) the input source must be coupled with a capacitor and the two unused
input pins must be connected via a capacitor to ground, to improve noise performance.
This application has a higher quiescent current, because the maximum output current of
the V/I converter is higher to obtain an output voltage swing of 9 V (peak).
8.2 Output amplifiers
The output amplifiers have a transresistance of 50 kΩ, a bandwidth of approximately
750 kHz and a maximum output current of 100 mA. The mid-tap output voltage equals the
voltage applied at the non-inverting pin of the output amplifier. This pin is connected to the
output of the 0.5VP buffer. This reduces the distortion when the load is connected
between an output amplifier and the buffer (because feedback is applied over the load).
8.3 Buffer
The buffer delivers 0.5VP to the output with a maximum output (sink and source) current of
200 mA (peak).
TDA8559_3
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheets
Rev. 03 — 15 May 2006
5 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
8.4 Dynamic quiescent controller
The Dynamic Quiescent Current controller (DQC) gives the advantage of low quiescent
current and low distortion. When there are high frequencies in the output signal, the DQC
will increase the quiescent current of the two output amplifiers and the buffer. This will
reduce the crossover distortion that normally occurs at high frequencies and low
quiescent current. The DQC gives output currents that are linear with the amplitude and
the frequency of the output signals. These currents control the quiescent current.
8.5 Stabilizer
The TDA8559T has a voltage supply range from 1.9 V to 30 V. This range is divided over
two supply voltage pins. Pin 16 is 1.9 V to 18 V (breakdown voltage of the process); this
pin is preferred for supply voltages less than 18 V. Pin 15 is used for applications where
VP is approximately 6 V to 30 V. The stabilizer output is internally connected to the supply
voltage pin 16. In the range from 6 V to 18 V, the voltage drop to pin 16 is 1 V. In the range
from 18 V to 30 V the stabilizer output voltage (to pin 16) is approximately 17 V.
8.6 Input logic
The MUTE pin (pin 7) selects the Mute mode of the V/I converters. LOW (TTL/CMOS)
level is mute. A voltage between 0.5 V (low level) and 1.5 V (high level) causes a soft mute
to operate (no plops). When pin 7 is floating or greater than 1.5 V it is in the operating
condition.
The input mode pin must be connected to VP when the supply voltage is greater than 6 V.
The input mode logic raises the tail current of the V/I converters and enables the two
buffers to bias the inputs of the V/I converters.
8.7 Reference
This circuit supplies all currents needed in this device. With the Standby mode pin 1
(TTL/CMOS), it is possible to switch to the Standby mode and reduce the total quiescent
current to below 10 µA.
TDA8559_3
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheets
Rev. 03 — 15 May 2006
6 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
9. Internal circuitry
Table 4.
Symbol
STANDBY
Internal circuits
Pin
Equivalent circuit
1
V
P1
10 kΩ
12
kΩ
mgd110
+IN1, −IN1, +IN2 2, 3, 5 and 6
and −IN2
V
P1
mgd106
SVRR
4
V
P1
50
kΩ
50
kΩ
50
kΩ
50
kΩ
mgd107
TDA8559_3
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheets
Rev. 03 — 15 May 2006
7 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
Table 4.
Symbol
MUTE
Internal circuits …continued
Pin
Equivalent circuit
7
V
P1
mgd112
MODE
8
V
P1
250
kΩ
1 kΩ
5 kΩ
mgd113
TDA8559_3
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheets
Rev. 03 — 15 May 2006
8 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
Table 4.
Symbol
Internal circuits …continued
Pin
Equivalent circuit
OUT2 and OUT1 11 and 14
V
P1
100 Ω
50 Ω
mgd108
buffer output
BUFFER
12
V
P1
buffer output
mgd109
VP2 and VP1
15 and 16
V
V
P1
P2
2 kΩ
mgd111
TDA8559_3
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheets
Rev. 03 — 15 May 2006
9 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
10. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VP2(max)
VP1(max)
Vi(max)
IORM
Parameter
Conditions
Min
Max
30
Unit
V
maximum supply voltage (pin 15)
maximum supply voltage (pin 16)
maximum input voltage
peak output current
-
-
18
V
-
18
V
repetitive
-
150
1.19
+85
+150
150
1
mA
W
°C
°C
°C
h
Ptot
total power dissipation
ambient temperature
-
Tamb
Tstg
−40
storage temperature
−55
Tvj
virtual junction temperature
short-circuiting time
-
-
tsc
VP < 10 V
11. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Typ
105
Unit
K/W
thermal resistance from junction to ambient
in free air
12. Characteristics
Table 7.
Characteristics
VP = 3 V; Tamb = 25 °C; fi = 1 kHz; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
DC characteristics
VP
operating supply voltage
1.9
-
3
30
4
V
Iq(tot)
Istb
V1
total quiescent current
standby supply current
Standby mode voltage
open load
open load
standby
operating
mute
2.75
mA
µA
V
-
-
10
0.5
18
0.5
18
300
0
-
1.5
0
-
V
V7
Mute mode voltage
input bias current
-
V
operating
1.5
-
-
V
Ibias
100
nA
Single-ended stereo application (RL = 32 Ω)
Po
output power
THD = 10 %
30
-
35
-
mW
%
THD
total harmonic distortion
Po = 20 mW; fi = 1 kHz
0.075
0.1
0.15
Po = 20 mW; fi = 10 kHz
-
-
%
Gv
fss
voltage gain
25
-
26
27
-
dB
kHz
small signal roll-off
frequency
−1 dB
750
αcs
channel separation
channel unbalance
Rs = 5 kΩ
40
-
-
-
-
dB
dB
∆Gv
1
TDA8559_3
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Product data sheets
Rev. 03 — 15 May 2006
10 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
Table 7.
Characteristics …continued
VP = 3 V; Tamb = 25 °C; fi = 1 kHz; unless otherwise specified.
Symbol
Vno
Parameter
Conditions
Min
Typ
70
Max
85
Unit
µV
noise output voltage
-
-
Vno(mute)
noise output voltage in
mute
20
30
µV
Vo(mute)
Vmt
output voltage in mute
mid-tap voltage
-
-
30
µV
V
1.4
75
-
1.5
100
-
1.6
125
100
-
Zi
input impedance
kΩ
mV
dB
Vos
DC output offset voltage
SVRR
supply voltage ripple
rejection
45
55
BTL application (RL = 25 Ω)
Po
output power
THD = 10 %
125
140
0.05
0.1
-
mW
%
THD
total harmonic distortion
Po = 70 mW; fi = 1 kHz
Po = 70 mW; fi = 10 kHz
-
0.1
-
-
%
Gv
fss
voltage gain
31
-
32
33
-
dB
kHz
small signal roll-off
frequency
−1 dB
750
Vno
noise output voltage
-
-
100
25
120
40
µV
Vno(mute)
noise output voltage in
mute
µV
Vo(mute)
Zi
output voltage in mute
input impedance
-
-
40
61
150
-
µV
kΩ
mV
dB
39
-
50
-
Vos
DC output offset voltage
SVRR
supply voltage ripple
rejection
39
49
Line driver application (RL = 1 kΩ)
Vo line output voltage
0.1
-
2.9
V
[1] The supply voltage range at pin VP1 is from 1.9 V to 18 V. Pin VP2 is used for the voltage range from 6 V to 30 V.
[2] Measured with low-pass filter 30 kHz.
[3] Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz, unweighted. Rs = 5 kΩ.
[4] RMS output voltage in mute is measured with Vi = 200 mV (RMS); f = 1 kHz.
[5] DC output offset voltage is measured between the signal output and the 0.5VP output.
[6] The ripple rejection is measured with a ripple voltage of 200 mV (RMS) applied to the positive supply rail (Rs = 0 kΩ).
[7] DC output offset voltage is measured between the two signal outputs.
13. Application information
13.1 General
For applications with a maximum supply voltage of 6 V (input mode low) the input pins
voltages in the range from 6 V to 18 V (input mode HIGH) the input DC level is
have to be used.
TDA8559_3
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Product data sheets
Rev. 03 — 15 May 2006
11 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
The capacitor Cb is recommended for stability improvement. The value may vary between
10 nF and 100 nF. This capacitor should be placed close to the IC between pin 12 and
pin 13.
13.2 Heatsink design
The standard application is stereo headphone single-ended with a 32 Ω load impedance
150 mA into the load.
For the SO16 envelope Rth(j-a) = 105 K/W; the maximum sinewave power dissipation for
150 – 25
105
T
amb = 25 °C is: 1.2 W =
--------------------
150 – 60
--------------------
105
For Tamb = 60 °C the maximum total power dissipation is: 0.85 W =
13.3 Test conditions
Tamb = 25 °C; unless otherwise specified: VP = 3 V, f = 1 kHz, RL = 32 Ω, Gain = 26 dB,
low input mode, band-pass filter: 22 Hz to 30 kHz. The total harmonic distortion as a
function of frequency was measured with low-pass filter of 80 kHz. The quiescent current
has been measured without any load impedance.
In applications with coupling capacitors towards the load, an electrolytic capacitor has to
be connected to pin 4 (SVRR).
1. The graphs for the single-ended application have been measured with the application
2. The graphs for the BTL application ‘input mode low’ have been measured with the
3. The graphs for the line-driver application have been measured with the application
mode high.
TDA8559_3
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheets
Rev. 03 — 15 May 2006
12 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
13.4 Input configurations
The IC can be applied in two ways, ‘input mode low’ and ‘input mode high’. This can be
selected by the input mode at pin 8:
1. Input mode low: pin 8 floating: The DC level of the input pins has to be between 0 V
and (VP − 1.8 V). A DC path to ground is needed. The maximum output voltage is
should be used.
2. Input mode high: pin 8 is connected to VP: This mode is intended for supply voltages
> 6 V. It can deliver a maximum output voltage of approximately 6 V (RMS) at
THD = 0.5 %. The DC voltage level of the input pins is (0.5VP + 0.6 V). Coupling
should be used.
2.2 µF
pins 2 and 5
INPUT
pins 2 and 5
INPUT
5 kΩ
V
V
IN
IN
pins 3 and 6
mgd123
pins 3 and 6
mgd124
VP < 6 V.
VP < 6 V.
Fig 3. Input configuration; with input capacitor
Fig 4. Input configuration; without input capacitor
pin 2
100 nF
V
V
IN
IN
pin 3
220 nF
220
nF
pins 2 and 5
pin 6
INPUT
V
IN
220 nF
100 nF
pins 3 and 6
mgd125
pin 5
mgd126
VP < 6 V.
At VP < 6 V, combined negative inputs.
Fig 5. Input configuration
Fig 6. Input configuration
V
P
620 kΩ
7
47 kΩ
220 nF
mute
mgl135
Fig 7. Soft mute
TDA8559_3
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheets
Rev. 03 — 15 May 2006
13 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
13.5 Standby/mute
1. The Standby mode (V1 < 0.5 V) is intended for power saving purpose. Then the total
quiescent current is < 10 µA.
2. To avoid ‘pop-noise’ during switch-on or switch-off the IC can be muted (V7 < 0.5 V).
This can be achieved by a ‘soft-mute’ circuit or by direct control from a microcontroller.
13.6 Application 1: SE with loudspeaker capacitor
The value of capacitor Cr influences the behavior of the Supply Voltage Ripple Rejection
(SVRR) at low frequencies; increasing the value of Cr increases the performance of the
13.7 Application 2: SE to buffer (without loudspeaker capacitor)
This is the basic headphone application. The advantage of this application with respect to
application 1, is that it needs only one external component (Cb) in the event of stability
13.8 Application 3: Improved SE to buffer (without loudspeaker capacitor)
This application is an improved configuration of application 2. The distinction between the
two is connecting the loads in opposite phase. This lowers the average current through
the SE buffer. It should be noted that a headphone cannot be used because the load
13.9 Application 4: Bridge tied load mono amplifier
This configuration delivers four times the output power of the SE application with the same
13.10 Application 5: Line driver application
The TDA8559T delivers a virtual rail-to-rail output voltage and is also usable in a low
voltage environment, as a line driver. In this application the input needs a DC path to
of capacitor Cr influences the behavior of the SVRR at low frequencies; increasing the
13.11 Application 6: Line driver application
The TDA8559T delivers a virtual rail-to-rail output voltage. Because the input mode has to
application can also be used for headphone application, however, due to the limited output
current and the limited output power at the headphone, series resistors have to be used
The value of capacitor Cr influences the behavior of the SVRR at low frequencies;
increasing the value of Cr increases the performance of the SVRR.
TDA8559_3
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheets
Rev. 03 — 15 May 2006
14 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
13.12 Application 7: Line driver application
With the supply voltage connected to pin 15 it is possible to use the head amplifier above
the maximum of 18 V to pin 16. The internal supply voltage will be reduced to a maximum
of approximately 17 V.
This will be convenient in applications where the supply voltage is higher than 18 V,
however an output voltage swing that reaches the higher supply voltage is not required.
application can also be used for headphone applications. However, due to the limited
output current, series resistors have to be used between the output pins and the load; see
13.13 Application diagrams
+V
P
V
V
P2
15
P1
100
nF
100 µF
16
STANDBY
IN1
1
REFERENCE
V
P
2
3
50 kΩ
+
−
+
V/I
+
−
OUT1
14
−
OA
220 µF
32 Ω
50 kΩ
50 kΩ
MUTE
MODE
7
8
DQC
INPUT
LOGIC
32 Ω
+
−
OUT2
11
5
6
+
OA
+
−
IN2
V/I
220 µF
−
50 kΩ
50
50
kΩ
kΩ
V
P
100 kΩ
BUFFER
12
SVRR
4
BUFFER
100
kΩ
22 µF
Cr
TDA8559T
Cb
13
mgd116
GND
Fig 8. Application 1; single-ended with loudspeaker capacitor
TDA8559_3
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheets
Rev. 03 — 15 May 2006
15 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
+V
P
V
V
P2
P1
100
nF
100 µF
15
16
STANDBY
1
REFERENCE
V
P
2
3
50 kΩ
+
−
+
V/I
IN1
+
−
OUT1
14
−
OA
32 Ω
50 kΩ
50 kΩ
MUTE
MODE
7
8
DQC
INPUT
LOGIC
32 Ω
+
−
OUT2
11
5
6
+
OA
+
−
V/I
IN2
−
50 kΩ
50
50
kΩ
kΩ
V
P
100 kΩ
BUFFER
12
4
BUFFER
SVRR
100
kΩ
TDA8559T
Cb
13
mgd117
GND
Fig 9. Application 2; single-ended to buffer (without loudspeaker capacitor)
TDA8559_3
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheets
Rev. 03 — 15 May 2006
16 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
+V
P
V
V
P2
P1
100
nF
100 µF
15
16
STANDBY
1
REFERENCE
V
P
2
3
50 kΩ
+
32 Ω
−
+
V/I
IN1
OUT1
14
−
OA
+
−
50 kΩ
50 kΩ
MUTE
MODE
7
8
DQC
INPUT
LOGIC
32 Ω
+
−
OUT2
11
5
6
+
OA
−
+
IN2
V/I
−
50 kΩ
50
50
kΩ
kΩ
V
P
100 kΩ
BUFFER
12
4
BUFFER
SVRR
100
kΩ
TDA8559T
Cb
13
mgd118
GND
Fig 10. Application 3; improved single-ended to buffer (without loudspeaker capacitor)
TDA8559_3
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Product data sheets
Rev. 03 — 15 May 2006
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TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
+V
P
V
V
P2
P1
100
nF
100 µF
15
16
STANDBY
IN1
1
REFERENCE
V
P
2
3
50 kΩ
+
−
+
V/I
OUT1
14
−
OA
50 kΩ
50 kΩ
MUTE
MODE
7
8
25 Ω
DQC
INPUT
LOGIC
+
−
OUT2
11
5
6
+
OA
IN2
V/I
−
50 kΩ
50
50
kΩ
kΩ
V
P
100 kΩ
BUFFER
12
4
BUFFER
SVRR
100
kΩ
TDA8559T
Cb
13
mgd119
GND
Fig 11. Application 4; BTL mono amplifier
TDA8559_3
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheets
Rev. 03 — 15 May 2006
18 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
+V
P
V
V
P2
P1
100
nF
100 µF
15
16
STANDBY
IN1
1
REFERENCE
V
P
2
3
50 kΩ
+
1 kΩ
−
+
V/I
OUT1
14
−
OA
10 µF
50 kΩ
50 kΩ
MUTE
MODE
7
8
DQC
INPUT
LOGIC
+
−
OUT2
11
5
6
+
OA
IN2
V/I
10 µF
1 kΩ
−
50 kΩ
50
50
kΩ
kΩ
V
P
100 kΩ
BUFFER
12
SVRR
4
BUFFER
100
kΩ
22 µF
Cr
TDA8559T
Cb
13
mgd120
GND
VP = 1.9 V to 6 V.
Fig 12. Application 5; line driver application
TDA8559_3
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Product data sheets
Rev. 03 — 15 May 2006
19 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
+V
P
V
V
P2
15
P1
100
nF
100 µF
16
STANDBY
1
REFERENCE
V
P
100 nF
IN1
2
3
50 kΩ
+
1 kΩ
−
+
V/I
OUT1
14
−
OA
10 µF
50 kΩ
50 kΩ
7
8
DQC
220
nF
INPUT
LOGIC
MUTE
MODE
100 nF
IN2
+
−
OUT2
11
5
6
+
OA
V/I
10 µF
1 kΩ
−
50 kΩ
50
50
kΩ
kΩ
V
P
100 kΩ
BUFFER
12
SVRR
4
BUFFER
100
kΩ
22 µF
Cr
TDA8559T
Cb
13
mgd121
GND
VP = 6 V to 18 V.
Fig 13. Application 6; line driver application
TDA8559_3
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheets
Rev. 03 — 15 May 2006
20 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
+V
P
V
P2
V
P1
100
nF
100 µF
15
16
STANDBY
1
REFERENCE
V
P
100 nF
IN1
2
3
50 kΩ
+
−
+
V/I
OUT1
14
−
+
OA
10 µF
−
50 kΩ
50 kΩ
7
8
DQC
220
nF
POWER
AMPLIFIER
INPUT
LOGIC
MUTE
MODE
100 nF
+
−
OUT2
11
5
6
+
−
+
OA
IN2
V/I
10 µF
−
50 kΩ
50
50
kΩ
kΩ
V
P
100 kΩ
BUFFER
12
4
SVRR
BUFFER
100
kΩ
TDA8559T
Cb
13
mgd122
GND
VP = 6 V to 30 V.
Fig 14. Application 7; line driver application
TDA8559_3
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheets
Rev. 03 — 15 May 2006
21 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
13.14 Printed-circuit board layout
MUTE
Inp.
mode
220 nF
Out2
220 µF
INP2
8
9
22 µF
Buf.
INP1
1
220 µF
Out1
100 nF
220 nF
Std.
by
TDA8559T
100 µF
D&A AUDIO POWER
QC - NIJMEGEN
HR
+Vp
001aae801
Top view component side.
Fig 15. Printed-circuit board layout
The Printed-Circuit Board (PCB) layout supports all applications as illustrated in Figure 8
voltage of 6 V.
13.15 Response curves for low input mode
mda089
mda090
10
q
20
I
V
P1
(mA)
(V)
8
16
12
6
4
(1)
(2)
8
4
0
2
0
0
4
8
12
16
20
0
10
20
30
V
P2
(V)
V
(V)
P
(1) High mode.
(2) Low mode.
Fig 16. Iq as a function of VP (stereo headphone)
Fig 17. VP1 as a function of VP2 (stereo headphone)
TDA8559_3
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Product data sheets
Rev. 03 — 15 May 2006
22 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
mda092
mda091
2
1
10
THD
(%)
THD
(%)
10
(1)
(2)
(1)
(2)
−1
10
1
−
1
10
−2
−2
10
10
10
2
3
4
5
−
3
−2
−
10
1
10
10
10
10
10
10
1
f (Hz)
P
(W)
o
f = 1 kHz.
RL = 32 Ω.
(1) VP = 3 V, RL = 32 Ω.
(1) VP = 5 V, THD = 50 mW.
(2) VP = 3 V, THD = 20 mW.
(2) VP = 5 V, RL = 32 Ω.
Fig 18. THD as a function of Po (stereo headphone)
Fig 19. THD as a function of frequency (stereo
headphone)
mda094
mda093
−2
1
10
V
(V)
I
o
q
(A)
−1
−3
10
10
(1)
(2) (3)
(1) (2)
−2
−4
−5
−6
−7
10
10
10
10
10
−3
10
−4
10
−5
10
0
0.5
1
1.5
2
2.5
(V)
0
1
2
3
V
(V)
stb
V
mute
(1) VP = 12 V.
(2) VP = 3 V and 6 V.
(3) VP = 3 V, 6 V and 12 V.
(1) VP = 3 V.
(2) VP = 12 V.
Fig 20. Iq as a function of Vstb (stereo headphone)
Fig 21. Vo as a function of Vmute (stereo headphone)
TDA8559_3
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Product data sheets
Rev. 03 — 15 May 2006
23 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
mda096
mda095
1
0
α
cs
(dB)
∆Gr
(dB)
0.5
−20
0
−40
−0.5
−60
−1
−80
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
VP = 3 V, Vi = 20 mV.
VP = 3 V, Vi = 20 mV.
Fig 22. Channel separation as a function of frequency
(stereo headphone)
Fig 23. Channel unbalance as a function of frequency
(stereo headphone)
mda098
mda097
0.4
0
P
(W)
o
SVRR
(dB)
0.3
−20
0.2
0.1
0
−40
(1)
(2)
−60
−80
2
3
4
5
10
10
10
10
10
0
4
8
12
f (Hz)
V
(V)
P
VP = 3 V, Rs = 0 Ω, Vr = 0.2 V (RMS).
(1) RL = 32 Ω, THD = 10 %.
(2) RL = 32 Ω, THD = 0.5 %.
Fig 24. SVRR as a function of frequency (stereo
headphone)
Fig 25. Po as a function of VP (stereo headphone)
TDA8559_3
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Product data sheets
Rev. 03 — 15 May 2006
24 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
mda099
mda130
2
1.5
10
THD
(%)
P
(W)
10
1
(1)
(2)
1
(1)
(2)
0.5
−1
10
−2
10
0
−3
−2
−1
10
10
10
1
0
4
8
12
P
(W)
V
(V)
o
P
(1) RL = 25 Ω.
f = 1 kHz.
(2) RL = 32 Ω.
(1) VP = 3 V, RL = 25 Ω.
(2) VP = 5 V, RL = 25 Ω.
Fig 26. Total worst case power dissipation as a
function of supply voltage (SE) (stereo
headphone)
Fig 27. THD as a function of Po (BTL mono)
mda131
mda132
1
0
SVRR
(dB)
THD
(%)
−20
−1
10
−40
(1)
(2)
−60
−2
10
10
−80
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
(1) VP = 3 V, RL = 25 Ω, THD = 70 mW.
(2) VP = 5 V, RL = 25 Ω, THD = 150 mW.
VP = 3 V, Rs = 0 Ω, Vr = 0.2 V (RMS).
Fig 28. THD as a function of frequency (BTL mono)
Fig 29. SVRR as a function of frequency (BTL mono)
TDA8559_3
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Product data sheets
Rev. 03 — 15 May 2006
25 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
mda134
mda133
1.6
1
P
o
(W)
P
(W)
1.2
0.8
0.4
0
0.75
(1)
(2)
0.5
(1)
(2)
0.25
0
0
4
8
12
0
4
8
12
V
(V)
V
(V)
P
P
(1) THD = 10 %, RL = 25 Ω.
(1) RL = 25 Ω.
(2) THD = 0.5 %, RL = 25 Ω.
(2) RL = 32 Ω
Fig 30. Po as a function of supply voltage (BTL mono)
Fig 31. Total worst case power dissipation as a
function of supply voltage (BTL mono)
13.16 Response curves for high input mode
mda119
mda120
0.8
2
P
(W)
P
(W)
o
1.6
1.2
0.6
(1)
(2)
0.4
0.2
0
(1)
(2)
0.8
0.4
0
0
4
8
12
16
0
4
8
12
16
V
(V)
V
(V)
P
P
(1) RL = 32 Ω, THD = 10 %.
(1) RL = 25 Ω.
(2) RL = 32 Ω, THD = 0.5 %.
(2) RL = 32 Ω.
Fig 32. Po as a function of VP (SE) (BTL mono)
Fig 33. Total worst case power dissipation as a
function of supply voltage (SE) (stereo
headphone)
TDA8559_3
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Product data sheets
Rev. 03 — 15 May 2006
26 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
mda122
mda121
2
1
10
THD
(%)
THD
(%)
10
(1)
(2)
−1
10
1
−1
10
−2
−2
10
10
10
2
3
4
5
−3
−2
−1
10
10
10
10
10
10
10
1
f (Hz)
P
(W)
o
VP = 10 V, RL = 32 Ω, f = 1 kHz.
VP = 10 V, RL = 32 Ω.
(1) Po = 100 mW.
(2) Po = 50 mW.
Fig 34. THD as a function of Po (stereo headphone)
Fig 35. THD as a function of frequency (stereo
headphone)
mda123
mda124
0
0
α
cs
(dB)
SVRR
(dB)
−20
−20
−40
−40
−60
−60
−80
−80
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
VP = 10 V, Vi = 20 mV.
VP = 10 V, Rs = 0 Ω, Vr = 0.2 V (RMS).
Fig 36. Channel separation as a function of frequency
(stereo headphone)
Fig 37. SVRR as a function of frequency (stereo
headphone)
TDA8559_3
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheets
Rev. 03 — 15 May 2006
27 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
mda126
mda125
2
1
10
THD
(%)
THD
(%)
10
1
(1)
(2)
−1
10
−1
10
−2
−2
10
10
10
2
3
4
5
−2
−1
10
10
10
10
10
10
1
10
f (Hz)
V
(V)
o
(1) VP = 12 V, RL = 1 kΩ.
VP = 12 V, Vo = 1 V.
(2) VP = 18 V, RL = 1 kΩ.
Fig 38. THD as a function of Vo (stereo line driver)
Fig 39. THD as a function of frequency (stereo line
driver)
mda127
mda128
0
0
α
(dB)
SVRR
(dB)
−20
−20
−40
−40
−60
−60
−80
−80
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
VP = 12 V, Vi = 20 mV.
VP = 12 V, Rs = 0 Ω, Vr = 0.2 V (RMS).
Fig 40. Channel separation as a function of frequency
(stereo line driver)
Fig 41. SVRR as a function of frequency (stereo line
driver)
TDA8559_3
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheets
Rev. 03 — 15 May 2006
28 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
mda129
10
V
o
(V)
8
6
4
(1)
(2)
2
0
0
4
8
12
16
20
V
(V)
P
(1) THD = 10 %, RL = 1 kΩ.
(2) THD = 0.5 %, RL = 1 kΩ.
Fig 42. Vo as a function of VP (stereo line driver)
14. Test information
14.1 Quality information
The General Quality Specification for Integrated Circuits, SNW-FQ-611 is applicable.
TDA8559_3
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Product data sheets
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29 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
15. Package outline
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
D
E
A
X
v
c
y
H
M
A
E
Z
16
9
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
8
e
w
M
detail X
b
p
0
2.5
scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
10.0
9.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.05
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.39
0.014 0.0075 0.38
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.020
0.028
0.012
inches
0.069
0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
99-12-27
03-02-19
SOT109-1
076E07
MS-012
Fig 43. Package outline SOT109-1 (SO16)
TDA8559_3
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Product data sheets
Rev. 03 — 15 May 2006
30 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
16. Soldering
16.1 Introduction to soldering surface mount packages
There is no soldering method that is ideal for all surface mount IC packages. Wave
soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is recommended.
16.2 Reflow soldering
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and
binding agent) to be applied to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement. Driven by legislation and
environmental forces the worldwide use of lead-free solder pastes is increasing.
Several methods exist for reflowing; for example, convection or convection/infrared
heating in a conveyor type oven. Throughput times (preheating, soldering and cooling)
vary between 100 seconds and 200 seconds depending on heating method.
Typical reflow temperatures range from 215 °C to 260 °C depending on solder paste
material. The peak top-surface temperature of the packages should be kept below:
Table 8.
SnPb eutectic process - package peak reflow temperatures (from J-STD-020C
July 2004)
Package thickness
< 2.5 mm
Volume mm3 < 350
240 °C + 0/−5 °C
225 °C + 0/−5 °C
Volume mm3 ≥ 350
225 °C + 0/−5 °C
225 °C + 0/−5 °C
≥ 2.5 mm
Table 9.
Pb-free process - package peak reflow temperatures (from J-STD-020C July
2004)
Package thickness
Volume mm3 < 350
Volume mm3 350 to
2000
Volume mm3 > 2000
< 1.6 mm
260 °C + 0 °C
260 °C + 0 °C
250 °C + 0 °C
260 °C + 0 °C
250 °C + 0 °C
245 °C + 0 °C
260 °C + 0 °C
245 °C + 0 °C
245 °C + 0 °C
1.6 mm to 2.5 mm
≥ 2.5 mm
Moisture sensitivity precautions, as indicated on packing, must be respected at all times.
16.3 Wave soldering
Conventional single wave soldering is not recommended for surface mount devices
(SMDs) or printed-circuit boards with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering method was specifically
developed.
If wave soldering is used the following conditions must be observed for optimal results:
• Use a double-wave soldering method comprising a turbulent wave with high upward
pressure followed by a smooth laminar wave.
• For packages with leads on two sides and a pitch (e):
TDA8559_3
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Product data sheets
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31 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
– larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be
parallel to the transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the
transport direction of the printed-circuit board.
The footprint must incorporate solder thieves at the downstream end.
• For packages with leads on four sides, the footprint must be placed at a 45° angle to
the transport direction of the printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must be fixed with a droplet of
adhesive. The adhesive can be applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the adhesive is cured.
Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 °C
or 265 °C, depending on solder material applied, SnPb or Pb-free respectively.
A mildly-activated flux will eliminate the need for removal of corrosive residues in most
applications.
16.4 Manual soldering
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage
(24 V or less) soldering iron applied to the flat part of the lead. Contact time must be
limited to 10 seconds at up to 300 °C.
When using a dedicated tool, all other leads can be soldered in one operation within
2 seconds to 5 seconds between 270 °C and 320 °C.
16.5 Package related soldering information
Table 10. Suitability of surface mount IC packages for wave and reflow soldering methods
Package[1]
Soldering method
Wave
Reflow[2]
BGA, HTSSON..T[3], LBGA, LFBGA, SQFP,
SSOP..T[3], TFBGA, VFBGA, XSON
not suitable
suitable
DHVQFN, HBCC, HBGA, HLQFP, HSO, HSOP,
HSQFP, HSSON, HTQFP, HTSSOP, HVQFN,
HVSON, SMS
not suitable[4]
suitable
PLCC[5], SO, SOJ
suitable
suitable
LQFP, QFP, TQFP
not recommended[5][6]
not recommended[7]
not suitable
suitable
SSOP, TSSOP, VSO, VSSOP
CWQCCN..L[8], PMFP[9], WQCCN..L[8]
suitable
not suitable
[1] For more detailed information on the BGA packages refer to the (LF)BGA Application Note (AN01026);
order a copy from your Philips Semiconductors sales office.
[2] All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the
maximum temperature (with respect to time) and body size of the package, there is a risk that internal or
external package cracks may occur due to vaporization of the moisture in them (the so called popcorn
effect). For details, refer to the Drypack information in the Data Handbook IC26; Integrated Circuit
Packages; Section: Packing Methods.
TDA8559_3
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Product data sheets
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32 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
[3] These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no
account be processed through more than one soldering cycle or subjected to infrared reflow soldering with
peak temperature exceeding 217 °C ± 10 °C measured in the atmosphere of the reflow oven. The package
body peak temperature must be kept as low as possible.
[4] These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the
solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink
on the top side, the solder might be deposited on the heatsink surface.
[5] If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave
direction. The package footprint must incorporate solder thieves downstream and at the side corners.
[6] Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
[7] Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger
than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
[8] Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered
pre-mounted on flex foil. However, the image sensor package can be mounted by the client on a flex foil by
using a hot bar soldering process. The appropriate soldering profile can be provided on request.
[9] Hot bar soldering or manual soldering is suitable for PMFP packages.
TDA8559_3
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Product data sheets
Rev. 03 — 15 May 2006
33 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
17. Revision history
Table 11. Revision history
Document ID
TDA8559_3
Release date
20060515
Data sheet status
Change notice
Supersedes
Product data sheet
-
TDA8559_2
Modifications:
• The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
• DIP16 (SOT39-1) package removed
TDA8559_2
(9397 750 02066)
19970627
Product specification
-
-
TDA8559_1
-
TDA8559_1
19960102
Preliminary specification
(9397 750 00546)
TDA8559_3
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheets
Rev. 03 — 15 May 2006
34 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
18. Legal information
18.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.semiconductors.philips.com.
malfunction of a Philips Semiconductors product can reasonably be expected
18.2 Definitions
to result in personal injury, death or severe property or environmental
damage. Philips Semiconductors accepts no liability for inclusion and/or use
of Philips Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is for the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Philips Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Philips Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Philips Semiconductors
sales office. In case of any inconsistency or conflict with the short data sheet,
the full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — Philips Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
pertaining to warranty, intellectual property rights infringement and limitation
of liability, unless explicitly otherwise agreed to in writing by Philips
18.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Philips Semiconductors does not give any representations
or warranties, expressed or implied, as to the accuracy or completeness of
such information and shall have no liability for the consequences of use of
such information.
Semiconductors. In case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — Philips Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
18.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — Philips Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
19. Contact information
TDA8559_3
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheets
Rev. 03 — 15 May 2006
35 of 36
TDA8559T
Philips Semiconductors
Low-voltage stereo headphone amplifier
20. Contents
packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
loudspeaker capacitor) . . . . . . . . . . . . . . . . . 14
loudspeaker capacitor) . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Koninklijke Philips Electronics N.V. 2006.
All rights reserved.
Date of release: 15 May 2006
Document identifier: TDA8559_3
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