This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MAS3132DG
Silicon epitaxial planar type
For switching circuits
■ Package
■ Features
•
•
Code
Two elements are contained in one package, allowing high-
SSSMini3-F2
density mounting
•
•
Pin Name
Short reverse recovery time trr
•
Small terminal capacitance Ct
1: Cathode 1
2: Cathode 2
3: Anode 1, 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Symbol
VR
Rating
80
Unit
V
■ Marking Symbol: MO
VRM
IF
80
V
■ Internal Connection
Forward current
Single
100
mA
3
Double
150
Peak forward current Single
Double
IFM
225
mA
mA
340
Non-repetitive peak
Single
IFSM
500
1
2
forward surge current * Double
Junction temperature
750
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note) : t = 1 s
*
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Forward voltage
Symbol
Conditions
IF = 100 mA
Min
Typ
Max
Unit
V
VF
VR
IR
1.2
Reverse voltage
IR = 100 µA
80
V
Reverse current
VR = 75 V
100
15
nA
pF
ns
Terminal capacitance
Reverse recovery time *
Ct
trr
VR = 0 V, f = 1 MHz
IF = 10 mA, VR = 6 V
10
Irr = 0.1 IR , RL = 100 Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. : trr measurement circuit
*
Bias Application Unit N-50BU
Input Pulse
tp
Output Pulse
trr
tr
t
10%
IF
t
A
90%
VR
Irr = 0.1 IR
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
Pulse Generator
(PG-10N)
Wave Form Analyzer
(SAS-8130)
Rs = 50 Ω
Ri = 50 Ω
Publication date: October 2007
SKF00089AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MAS3132DG
SSSMini3-F2
Unit: mm
1.20 0.05
0.30 +−00..0025
3
2
1
0.13 +−00..0025
0.20 +−00..0025
(0.4)
(0.4)
0.80 0.05
SKF00089AED
3
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