This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC6054G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2174G
Features
Package
High forward current transfer ratio hFE
SS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Code
SSMini3-F3
Marking Symbol: 7M
Pin Name
1: Base
Absolute Maximum Ratings Ta = 25°C
2: Emitter
3: Collector
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
60
50
7
V
V
100
mA
mA
mW
°C
Peak collector current
ICP
200
Collector power dissipation
Junction temperature
PC
125
Tj
125
Storage temperature
T
stg
-55 to +125
°C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
60
50
7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
VCBO IC = 10 mA, IE = 0
VCEO IC = 2 mA, IB = 0
VEBO IE = 10 mA, IC = 0
V
V
ICBO
ICEO
hFE
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VCE = 10 V, IC = 2 mA
0.1
100
460
0.3
mA
mA
160
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = 100 mA, IB = 10 mA
0.1
V
fT
VCB = 10 V, IE = -2 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
100
MHz
Collectoroutputcapacitance
Cob
2.2
pF
(Commonbase, inputopencircuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2007
SJC00405AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini3-F3
Unit: mm
1.60 +−00..0035
0.26 +−00..0025
3
1
2
0.13 +−00..0025
(0.50)
(0.50)
1.00 0.05
(5°)
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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