This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
SSSMini3-F1 Package
2SC5846G
Silicon NPN epitaxial planar type
For general amplification
■ Features
■ Package
• High forward current transfer ratio hFE
• Code
• SSS-mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
SSSMini3-F2
• Marking Symbol: 7K
• Pin Name
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
60
50
V
7
100
V
mA
mA
mW
°C
Peak collector current
ICP
200
Collector power dissipation
Junction temperature
PC
100
Tj
125
Storage temperature
Tstg
−55 to +125
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
60
50
7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
IC = 10 µΑ, IE = 0
IC = 2 mA, IB = 0
V
IE = 10 µΑ, IC = 0
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VCE = 10 V, IC = 2 mA
V
0.1
100
390
0.3
µA
µA
V
ICEO
hFE
180
Collector-emitter saturation voltage
VCE(sat) IC = 100 mA, IB = 10 mA
0.1
2.2
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
pF
(Common base, input open circuited)
Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
100
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
SJC00399AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
SSSMini3-F2
Unit: mm
1.20 0.05
0.30 +−00..0025
3
2
1
0.13 +−00..0025
0.20 +−00..0025
(0.4)
(0.4)
0.80 0.05
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