This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC5632G
Silicon NPN epitaxial planar type
For high-frequency amplification and switching
■ Features
■ Package
•
• High transition frequency fT
Code
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
SMini3-F2
Marking Symbol: 2R
Pin Name
1: Base
•
•
2: Emitter
3: Collector
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
15
8
V
3
50
V
Collector current
IC
PC
Tj
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
150
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
IEBO
Conditions
Min
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
hFE ratio *
IC = 100 µA, IE = 0
15
VEB = 2 V, IC = 0
2
µA
hFE
VCE = 4 V, IC = 2 mA
100
0.6
350
1.5
∆hFE
hFE2: VCE = 4 V, IC = 100 µA
hFE1: VCE = 4 V, IC = 2 mA
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = 20 mA, IB = 4 mA
0.1
1.6
V
GHz
pF
fT
VCE = 5 V, IC = 15 mA, f = 200 MHz
0.6
1.1
1.0
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : ∆hFE = hFE2 / hFE1
*
Publication date: June 2007
SJC00369AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2
Unit: mm
2.00 0.20
0.30 +−00..0025
3
1
2
0.13 +−00..0025
(0.65)
(0.65)
1.30 0.10
(5°)
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