This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC4691G
Silicon NPN epitaxial planar type
For high-speed switching
■ Features
■ Package
• Code
SSMini3-F3
• Marking Symbol: 2Y
• Pin Name
1. Base
• Low collector-emitter saturation voltage VCE(sat)
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (E-B short) VCES
Emitter-base voltage (Collector open) VEBO
Symbol
Rating
Unit
V
40
40
V
5
100
V
Collector current
IC
ICP
PC
Tj
mA
mA
mW
°C
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
300
125
125
Tstg
−55 to +125
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
ICBO
Conditions
Min
Typ
Max
0.1
Unit
µA
µA
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCB = 40 V, IE = 0
IEBO
VEB = 4 V, IC = 0
0.1
hFE
VCE = 1 V, IC = 10 mA
60
200
0.25
1.0
VCE(sat) IC = 10 mA, IB = 1 mA
0.17
V
VBE(sat) IC = 10 mA, IB = 1 mA
V
fT
VCB = 10 V, IE = −10 mA, f = 200 MHz
450
2
MHz
pF
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
6
(Common base, input open circuited)
Turn-on time
Turn-off time
Storage time
ton
toff
tstg
Refer to the measurement circuit
17
17
10
ns
ns
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
No-rank
hFE
60 to 120
90 to 200
60 to 200
Product of no-rank is not classified and have no indication for rank.
Publication date: May 2007
SJC00394AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini3-F3
Unit: mm
1.60 +−00..0035
0.26 +−00..0025
3
1
2
0.13 +−00..0025
(0.50)
(0.50)
1.00 0.05
(5°)
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