This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC3936G
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
■ Package
• Code
SMini3-F2
• Marking Symbol: K
• Pin Name
1. Base
• Optimum for RF amplification, oscillation, mixing, and IF of
FM/AM radios
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
2. Emitter
■ Absolute Maximum Ratings Ta = 25°C
3. Collector
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
30
20
V
5
30
V
Collector current
IC
PC
Tj
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
150
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
hFE
Conditions
Min
30
20
5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio *
Transition frequency
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
V
IE = 10 µA, IC = 0
V
VCE = 10 V, IC = 1 mA
70
150
250
fT
VCB = 10 V, IE = −1 mA, f = 200 MHz
VCB = 10 V, IE = −1 mA, f = 10.7 MHz
230
1.3
MHz
pF
Reverse transfer capacitance
(Common emitter)
Cre
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
B
C
hFE
70 to 160
110 to 250
Publication date: April 2007
SJC00362AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3936G
Cob VCB
bie gie
bre gre
1.6
1.2
0.8
0.4
0
12
10
8
0
− 0.5
−1.0
−1.5
−2.0
−2.5
−3.0
f = 0.45 MHz
IE = 0
yie = gie + jbie
yre = gre + jbre
10.7
25
f = 1 MHz
Ta = 25°C
VCE = 10 V
VCE = 10 V
100
58
58
− 0.4 mA
−1 mA
6
25
−2 mA
10.7
4
−4 mA
IE = − 0.1 mA
−1 mA
−2 mA
−4 mA
−7 mA
100
2
IE = −7 mA
f = 0.45 MHz
0
0
4
8
12
16
(
20
− 0.5 − 0.4 − 0.3 − 0.2 − 0.1
0
)
1
10
100
)
(
(
)
V
Input conductance gie mS
Reverse transfer conductance gre mS
Collector-base voltage VCB
bfe gfe
boe goe
1.2
1.0
0.8
0.6
0.4
0.2
0
0
−20
0.45
− 0.4 mA
f = 0.45 MHz
10.7
10.7
−1 mA
25
58
100
100
100
−2 mA
−7 mA
25
−4 mA
58
−4 mA
−2 mA
100
10.7
−40
100
−1 mA
58
58
58
25
IE = −7 mA
− 0.4 mA
−60
IE = − 0.1 mA
25
−80
10.7
−100
−120
yoe = goe + jboe
VCE = 10 V
yfe = gfe + jbfe
VCE = 10 V
f = 0.45 MHz
0.2 0.4
0
0.6
0.8
(
1.0
0
20
40
60
80
100
)
(
)
Output conductance goe mS
Forward transfer conductance gfe mS
SJC00362AED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2
Unit: mm
2.00 0.20
0.30 +−00..0025
3
1
2
0.13 +−00..0025
(0.65)
(0.65)
1.30 0.10
(5°)
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semiconductors described in this book
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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